kw.\*:("Mercury Tellurides")
Results 1 to 25 of 2959
Selection :
Chemoabrasive polishing of MCT wafersGOLDSTEIN, M; HOROWITZ, A; MAKOVSKY, J et al.Metallography. 1983, Vol 16, Num 3, pp 321-326, issn 0026-0800Article
Room-temperature magnetoabsorption in HgTe/Hg0.15Ce0.85Te superlatticesYOO, K. H; AGGARWAL, R. L; RAM-MOHAN, L. R et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 2, pp 1194-1199, issn 0734-2101Article
Silicon nitride passivant for HgCdTe n+p diodesKAJIHARA, N; SUDO, G; MIYAMOTO, Y et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 5, pp 1252-1255, issn 0013-4651Conference Paper
Optical nonlinearity in mercury tellurideWOLFF, P. A; YUEN, S. Y; HARRIS, K. A et al.Applied physics letters. 1987, Vol 50, Num 26, pp 1858-1860, issn 0003-6951Article
Bipolar transistor action in cadmium mercury tellurideASHLEY, T; CRIMES, G; ELLIOTT, C. T et al.Electronics Letters. 1986, Vol 22, Num 11, pp 611-613, issn 0013-5194Article
Electrical properties of HgCdMnTe P-N junctionsPLACZEK-POPKO, E; DUDZIAK, E; JEDRAL, L et al.Infrared physics. 1989, Vol 29, Num 5, pp 903-905, issn 0020-0891, 3 p.Article
HgCdTe heterojunction contact photoconductorSMITH, D. L; ARCH, D. K; WOOD, R. A et al.Applied physics letters. 1984, Vol 45, Num 1, pp 83-85, issn 0003-6951Article
Interface states and subbands in HgTe-CdTe heterostructuresLIN-LIU, Y. R; SHAM, L. J.Physical review. B, Condensed matter. 1985, Vol 32, Num 8, pp 5561-5563, issn 0163-1829Article
Strain effects in HgTe-CdTe superlattices grown on CdTe substratesWU, G. Y; MCGILL, T. C.Applied physics letters. 1985, Vol 47, Num 6, pp 634-636, issn 0003-6951Article
High performance p-n junctions in the LPE MnxCdyHg1-x-yTe layersBAZHENOV, N. L; GASANOV, S. I; IVANOV-OMSKII, V. I et al.Infrared physics. 1992, Vol 33, Num 3, pp 169-173, issn 0020-0891Article
Thermally induced optical bistability in CdHgTeCRAIG, D; DYBALL, M. R; MILLER, A et al.Optics communications. 1985, Vol 54, Num 6, pp 383-387, issn 0030-4018Article
Infrared photoluminescence spectra from HgTe-CdTe superlatticesHETZLER, S. R; BAUKUS, J. P; HUNTER, A. T et al.Applied physics letters. 1985, Vol 47, Num 3, pp 260-262, issn 0003-6951Article
The influence of doping on ultimate performance of CdxHg1-xTe photoresistorsJOZWIKOWSKI, K; PIOTROWSKI, J.Journal of Technical Physics. 1984, Vol 25, Num 3-4, pp 487-492, issn 0324-8313Article
HgCdTe all-epitaxial semiconductor/semimetal Schottky photodiodeSULHOFF, J. W; ZYSKIND, J. L; BURRUS, C. A et al.Applied physics letters. 1990, Vol 56, Num 4, pp 388-390, issn 0003-6951Article
Laterally-confined HgTe-CdTe quantum wells and superlatticesMEYER, J. R; BARTOLI, F. J; HOFFMAN, C. A et al.Superlattices and microstructures. 1990, Vol 7, Num 4, pp 387-391, issn 0749-6036, 5 p.Article
The spreading resistance technique applied to mercury cadmium telluride heterojunctionsBOUKERCHE, M; YOO, S. S; FAURIE, J. P et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 2, pp 1233-1236, issn 0734-2101Article
Annihilation des positons dans les cristaux de HgTe et Hg1-xCdxTe(x=0,2) irradiés par électronsVOJTSEKHOVSKIJ, A. V; KOKHANENKO, A. P; LILENKO, YU. V et al.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 5, pp 815-817, issn 0015-3222Article
Transport d'électrons chauds dans les semiconducteurs sans bande interdite, en tenant compte de la diffusion par les phonons optiquesDMITRIEV, A. V.Fizika tverdogo tela. 1989, Vol 31, Num 1, pp 256-263, issn 0367-3294Article
Hole Hall-mobility enhancement in HgTe-Hg1-xCdxTe heterojunctionsFAURIE, J. P; SOU, I. K; WIJEWARNASURIYA, P. S et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 8, pp 6000-6002, issn 0163-1829, part 2Article
Molecular beam epitaxial growth of high quality HgTe and Hg1-xCdxTe onto GaAs (001) substratesFAURIE, J. P; SIVANANTHAN, S; BOUKERCHE, M et al.Applied physics letters. 1984, Vol 45, Num 12, pp 1307-1309, issn 0003-6951Article
A selective etchant for Hg1-xCdxTe, CdTe and HgTe on GaAsLEECH, P. W; GWYNN, P. J; KIBEL, M. H et al.Applied surface science. 1989, Vol 37, Num 3, pp 291-298, issn 0169-4332, 8 p.Article
Growth and properties of dilkute magnetic semiconductor superlattices containing Hg1-xMnxTeHARRIS, K. A; HWANG, S; LANSARI, Y et al.Applied physics letters. 1986, Vol 49, Num 12, pp 713-715, issn 0003-6951Article
Effet du champ sur la surface du semimétal HgTe et du semiconducteur Cd0,2Hg0,8TeROMANOV, O. V; BOZHEVOL'NOV, V. B; MYASOEDOV, YU. N et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 6, pp 1064-1068, issn 0015-3222Article
Growth and characterization of CdTe, HgTe and HgCdTe by atomic layer epitaxyKARAM, N. H; WOLFSON, R. G; BHAT, I. B et al.Thin solid films. 1993, Vol 225, Num 1-2, pp 261-264, issn 0040-6090Conference Paper
Ion sputter effects on HgTe, CdTe, and HgCdTeSTAHLE, C. M; HELMS, C. R.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 5, pp 3239-3245, issn 0734-2101Article